УДК 621.373:537.311.322

В работе исследовано поведение p⁺pp⁺-GaAs диода со сверхкороткой базой в режиме генерации в терагерцовом спектре. Диод представляет собой периодическую последовательность квантовых каналов, образованных чередующимися слоями шириной 8нм GaAs, разделенных селективно легированными барьерами p-AlGaAs. Квантовые состояния дырок в канале рассматривались в рамках простейшей двухзонной модели Кейна. Высота барьера бралась равной 0.5 эВ. Были исследованы устройства с длинами баз 0.055-0.15 мкм с индуктивными нагрузками в интервале 0-0.066 пгн·см. Моделирование проводилось на основе решения бесстолкновительного кинетического уравнения совместно с уравнением Пуассона и уравнением для интегрального тока в замкнутой цепи.

In the work, the behaviour of p⁺pp⁺-GaAs diode with short-channel p-base lD in a generation mode in ТГц spectrum is investigated. The diode represents periodic sequence of quantum channels formed by alternating GaAs layers of 8нм width, separated by selectively doped p-AlGaAs barriers. Quantum states of holes in the channel were considered within the frame of the two-band Kane's model. The barrier height has been of 0.5 eV. Devices with lengths of bases 0.055-0.15 microns with inductive loadings in the range of 0-0.066 pH·cm have been investigated. Modeling has been done on the basis of solution of the collisionless kinetic equation together with Poisson's equation and the equation for the integrated circuit.

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